| PART |
Description |
Maker |
| IPT0408-05A |
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., LTD.
|
| IPT1208-SEA IPT1208-CEA IPT1208-BEA IPT1208-TEA |
High current density due to double mesa technology
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., LTD.
IP SEMICONDUCTOR CO., L...
|
| IPT12Q06-BEF |
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., L...
|
| IPT1206-TEA IPT1206-CEA IPT1206-BEA IPT1206-SEA |
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., L...
|
| MCN51-8S3-PFA MCN51-16P2-DS MCN51-16P2-PFA MCN51-1 |
CAP 0.1UF 50V 20% Z5U RAD.20 .20X.20 BULK 高电流，高密度，电源连接
16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor 高电流，高密度，电源连接
High Current, High Density, Power Connectors 高电流，高密度，电源连接
High Current / High Density / Power Connectors
|
HIROSE ELECTRIC Co., Ltd.
Hirose Electric USA, INC.
HIROSE[Hirose Electric]
|
| ISPLSI1032EA-170LT100 ISPLSI1032EA-200LT100 1032EA |
60 MHz in-system prommable high density PLD
170 MHz in-system prommable high density PLD
125 MHz in-system prommable high density PLD
100 MHz in-system prommable high density PLD
Shielded Paired Cable; Number of Conductors:8; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyethylene; Shielding Material:Aluminum Foil/Polyester Tape/Tinned Copper Braid; Number of Pairs:4 RoHS Compliant: Yes
In-System Programmable High Density PLD 在系统可编程高密度可编程逻辑器件
|
LATTICE[Lattice Semiconductor]
Lattice Semiconductor Corporation
Lattice Semiconductor, Corp.
|
| TN1205T-600B TN1205T-600B-TR |
High current density per square mm
|
STMicroelectronics
|
| B240A B230LA B230LA-E3/5AT B230LA-E3/61T B230LA08 |
High-Current Density Surface Mount Schottky Rectifier
|
Vishay Siliconix
|
| SSB43L SSB44 |
High-Current Density Surface Mount Schottky Rectifier
|
Shenzhen Taychipst Electronic Co., Ltd
|
| SS10PH45 |
High Current Density Surface Mount Schottky Rectifier
|
Vishay Siliconix
|
